Electronic bond rupture of Si atoms on Si(111)-(2 x 1) induced by 1.16-eV photon excitation

被引：3

作者：

Inami, E

Ishikawa, K

Kanasaki, J

Tanimura, K

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Osaka City Univ, Dept Intelligent Mat Engn, Osaka 5588585, Japan

来源：

SURFACE SCIENCE | 2003年 / 528卷 / 1-3期

关键词：

surface structure; morphology; roughness; and topography; laser methods; silicon; scanning tunneling microscopy;

D O I：

10.1016/S0039-6028(02)02619-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A scanning tunneling microscopy study has revealed that 1.16-eV photon excitation induces electronic bond rupture of Si atoms on Si(1 1 1)-(2 x 1) surface. Monovacancy formation at perfect surface sites is the primary step of the structural changes, and it is followed by efficient formation of vacancy clusters with two distinctive forms: a vacancy string aligned on the Si chain one-dimensionally and a vacancy island developed two-dimensionally on the surface. The mechanism and kinetics of this photoinduced process is discussed based on the experimental results. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：115 / 120

页数：6

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