Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP light-emitting diodes grown by low-pressure organometallic vapor phase epitaxy

被引：22

作者：

Koizumi, A ^{[1
]}

Fujiwara, Y ^{[1
]}

Inoue, K ^{[1
]}

Urakami, A ^{[1
]}

Yoshikane, T ^{[1
]}

Takeda, Y ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

erbium; oxygen; electroluminescence; GaAs; light emitting diode; double heterostructures; organometallic vapor phase epitaxy;

D O I：

10.1143/JJAP.42.2223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on room-temperature 1.54 mum electroluminescence, for the first time, of Er,O codoped GaAs/GaInP doubleheterostructure light emitting diodes grown by organometallic vapor phase epitaxy. The luminescence is due to intra-4f shell transition from the first excited state to the ground state of Er3+ ions. The erbium and oxygen were uniformly doped in the GaAs active layer with a concentration of 8 x 10(18) cm(-3). Emission lines in the spectrum indicated successful formation of the Er-2O center and a preferential excitation of the center by current injection. The intensity of the main line observed at 1.538 mum increased linearly. with current density and exhibited a tendency to saturate at a current density higher than 20 A/cm(2).

引用

页码：2223 / 2225

页数：3

共 9 条

[1] DRASTIC EFFECTS OF HYDROGEN FLOW-RATE ON GROWTH-CHARACTERISTICS AND ELECTRICAL OPTICAL-PROPERTIES OF INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY WITH TMIN AND TBP [J].

FUJIWARA, Y ;

FURUTA, S ;

MAKITA, K ;

ITO, Y ;

NONOGAKI, Y ;

TAKEDA, Y .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :544-548

[2] Luminescence properties of ErO-codoped III-V semiconductors grown by organometallic vapor phase epitaxy [J].

Fujiwara, Y ;

Kawamoto, T ;

Koide, T ;

Takeda, Y .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :770-773

[3] 1.54-MU-M ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED GAAS AND GAAIAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

GALTIER, P ;

POCHOLLE, JP ;

CHARASSE, MN ;

DECREMOUX, B ;

HIRTZ, JP ;

GROUSSIN, B ;

BENYATTOU, T ;

GUILLOT, G .

APPLIED PHYSICS LETTERS, 1989, 55 (20) :2105-2107

[4] 1.54 MU-M ELECTROLUMINESCENCE BY ELECTRON-IMPACT EXCITATION OF ER ATOMS DOPED IN INP [J].

ISSHIKI, H ;

KOBAYASHI, H ;

YUGO, S ;

KIMURA, T ;

IKOMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B) :L225-L227

[5] Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy [J].

Koizumi, A ;

Watanabe, N ;

Inoue, K ;

Fujiwara, Y ;

Takeda, Y .

PHYSICA B-CONDENSED MATTER, 2001, 308 :891-894

[6] Local structures around Er atoms in GaAs:Er,O studied by fluorescence EXAFS and photoluminescence [J].

Ofuchi, H ;

Kubo, T ;

Tabuchi, M ;

Takahei, K ;

Takeda, Y .

MICROELECTRONIC ENGINEERING, 2000, 51-2 :715-721

[7] SELECTIVE FORMATION OF AN EFFICIENT ER-O LUMINESCENCE CENTER IN GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION UNDER AN ATMOSPHERE CONTAINING OXYGEN [J].

TAKAHEI, K ;

TAGUCHI, A .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1979-1982

[8] ATOMIC CONFIGURATION OF THE ER-O LUMINESCENCE CENTER IN ER-DOPED GAAS WITH OXYGEN CODOPING [J].

TAKAHEI, K ;

TAGUCHI, A ;

HORIKOSHI, Y ;

NAKATA, J .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) :4332-4339

[9] ROOM-TEMPERATURE SHARP LINE ELECTROLUMINESCENCE AT LAMBDA=1.54-MU-M FROM AN ERBIUM-DOPED, SILICON LIGHT-EMITTING DIODE [J].

ZHENG, B ;

MICHEL, J ;

REN, FYG ;

KIMERLING, LC ;

JACOBSON, DC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2842-2844

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