Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates

被引：17

作者：

Chen, Kai-Huang ^{[1
]}

Chang, Ting-Chang ^{[2
]}

Chang, Guan-Chang ^{[3
]}

Hsu, Yung-En ^{[2
]}

Chen, Ying-Chung ^{[4
]}

Xu, Hong-Quan ^{[5
]}

机构：

[1] Tung Fang Inst Technol, Dept Elect Engn & Comp Sci, Kaohsiung, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan

[5] So Taiwan Univ, Dept Electroopt Engn, Tainan, Taiwan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 99卷 / 01期

关键词：

MEMORY APPLICATIONS; CAPACITORS; DEVICES; FABRICATION; DEPENDENCE;

D O I：

10.1007/s00339-009-5523-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To improve the electrical properties of as-deposited BZ1T9 ferroelectric thin films, the supercritical carbon dioxide fluid (SCF) process were used by a low temperature treatment. In this study, the BZ1T9 ferroelectric thin films were post-treated by SCF process which mixed with propyl alcohol and pure H2O. After SCF process treatment, the remnant polarization increased in hysteresis curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. Additionally, the improvement qualities of as-deposited BZ1T9 thin films after SCF process treatment were carried out XPS, C-V, and J-E measurements.

引用

页码：291 / 295

页数：5

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