Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

被引：52
作者：
Brunhes, T
Boucaud, P
Sauvage, S
Aniel, F
Lourtioz, JM
Hernandez, C
Campidelli, Y
Kermarrec, O
Bensahel, D
Faini, G
Sagnes, I
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] STMicroelectronics, F-38926 Crolles, France
[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France
[4] Ctr Natl Etud Telecommun, Lab CDP, CNRS, URA 250, F-92220 Bagneux, France
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.1308526
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].
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页码：1822 / 1824
页数：3
相关论文
共 16 条
[11]   ULTRATHIN SIMGEN STRAINED LAYER SUPERLATTICES - A STEP TOWARDS SI OPTOELECTRONICS [J].
PRESTING, H ;
KIBBEL, H ;
JAROS, M ;
TURTON, RM ;
MENCZIGAR, U ;
ABSTREITER, G ;
GRIMMEISS, HG .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) :1127-1148
[12]   PHOTOLUMINESCENCE STUDY OF THE CROSSOVER FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH FOR GE ON SI(100) [J].
SCHITTENHELM, P ;
GAIL, M ;
BRUNNER, J ;
NUTZEL, JF ;
ABSTREITER, G .
APPLIED PHYSICS LETTERS, 1995, 67 (09) :1292-1294
[13]   Photoluminescence of charged InAs self-assembled quantum dots [J].
Schmidt, KH ;
Medeiros-Ribeiro, G ;
Petroff, PM .
PHYSICAL REVIEW B, 1998, 58 (07) :3597-3600
[14]   Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001) [J].
Schmidt, OG ;
Lange, C ;
Eberl, K .
APPLIED PHYSICS LETTERS, 1999, 75 (13) :1905-1907
[15]   Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy [J].
Stimmer, J ;
Reittinger, A ;
Nutzel, JF ;
Abstreiter, G ;
Holzbrecher, H ;
Buchal, C .
APPLIED PHYSICS LETTERS, 1996, 68 (23) :3290-3292
[16]   PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON [J].
WAGNER, J .
PHYSICAL REVIEW B, 1984, 29 (04) :2002-2009
12