Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

被引：52

作者：

Brunhes, T

Boucaud, P

Sauvage, S

Aniel, F

Lourtioz, JM

Hernandez, C

Campidelli, Y

Kermarrec, O

Bensahel, D

Faini, G

Sagnes, I

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] STMicroelectronics, F-38926 Crolles, France

[3] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France

[4] Ctr Natl Etud Telecommun, Lab CDP, CNRS, URA 250, F-92220 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1308526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].

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页码：1822 / 1824

页数：3

相关论文

共 16 条

[1] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].

APETZ, R ;

VESCAN, L ;

HARTMANN, A ;

DIEKER, C ;

LUTH, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447

[2]

Bensahel D, 1998, SOLID STATE TECHNOL, V41, pS5

[3] Intraband absorption in Ge/Si self-assembled quantum dots [J].

Boucaud, P ;

Le Thanh, V ;

Sauvage, S ;

Débarre, D ;

Bouchier, D .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :401-403

[4] Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates [J].

Colace, L ;

Masini, G ;

Assanto, G ;

Luan, HC ;

Wada, K ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1231-1233

[5] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[6] ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A ;

CARNERA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237

[7] Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor [J].

Hernandez, C ;

Campidelli, Y ;

Simon, D ;

Bensahel, D ;

Sagnes, I ;

Patriarche, G ;

Boucaud, P ;

Sauvage, S .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :1145-1148

[8] Nucleation and growth of self-assembled Ge/Si(001) quantum dots [J].

Le Thanh, V ;

Boucaud, P ;

Debarre, D ;

Zheng, Y ;

Bouchier, D ;

Lourtioz, JM .

PHYSICAL REVIEW B, 1998, 58 (19) :13115-13120

[9] Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition [J].

Patriarche, G ;

Sagnes, I ;

Boucaud, P ;

Le Thanh, V ;

Bouchier, D ;

Hernandez, C ;

Campidelli, Y ;

Bensahel, D .

APPLIED PHYSICS LETTERS, 2000, 77 (03) :370-372

[10] Room-temperature electroluminescence from Si/Ge/Si1-xGex quantum-well diodes grown by molecular-beam epitaxy [J].

Presting, H ;

Zinke, T ;

Splett, A ;

Kibbel, H ;

Jaros, M .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2376-2378