Phase transformation in Mg-Sb3Te thin films

被引：2

作者：

Li Jun-Jian ^{[1
]}

Wang Guo-Xiang ^{[2
]}

Chen Yi-Min ^{[1
]}

Shen Xiang ^{[2
]}

Nie Qiu-Hua ^{[1
]}

Lu Ye-Gang ^{[1
]}

Dai Shi-Xun ^{[2
]}

Xu Tie-Feng ^{[2
]}

机构：

[1] Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China

[2] Ningbo Univ, Adv Technol Res Inst, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 08期

基金：

中国国家自然科学基金;

关键词：

phase change memory; data retention; Mg-Sb-Te; thermal stability; DOPED GE2SB2TE5 FILMS; CHANGE MEMORY; STORAGE;

D O I：

10.1088/1674-1056/23/8/087301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mg-doped Sb3Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb3Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb3Te. Especially Mg-25.19(Sb3Te)(74.81) shows higher T-c (similar to 190 degrees C) and larger E-a (similar to 3.49 eV), which results in a better data retention maintaining for 10 yr at similar to 112 degrees C. Moreover R-a/R-c value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory (PCM).

引用

页数：4

共 16 条

[1] Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application [J].

Cheng, Limin ;

Wu, Liangcai ;

Song, Zhitang ;

Rao, Feng ;

Peng, Cheng ;

Yao, Dongning ;

Liu, Bo .

MATERIALS LETTERS, 2012, 71 :98-100

[2] Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications [J].

Fu, Jing ;

Shen, Xiang ;

Nie, Qiuhua ;

Wang, Guoxiang ;

Wu, Liangcai ;

Dai, Shixun ;

Xu, Tiefeng ;

Wang, R. P. .

APPLIED SURFACE SCIENCE, 2013, 264 :269-272

[3] Low-cost and nanoscale non-volatile memory concept for future silicon chips [J].

Lankhorst, MHR ;

Ketelaars, BWSMM ;

Wolters, RAM .

NATURE MATERIALS, 2005, 4 (04) :347-352

[4] Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films [J].

Liu, B ;

Song, ZT ;

Zhang, T ;

Feng, SL ;

Chen, BM .

CHINESE PHYSICS, 2004, 13 (11) :1947-1950

[5] Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements [J].

Privitera, S ;

Rimini, E ;

Zonca, R .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3044-3046

[6] Crystallization behavior of amorphous Alx(Ge2Sb2Te5)1-x thin films [J].

Seo, Jae-Hee ;

Song, Ki-Ho ;

Lee, Hyun-Yong .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)

[7] Au doped Sb3Te phase-change material for C-RAM device [J].

Wang, Feng ;

Zhang, Ting ;

Liu, Chun-liang ;

Song, Zhi-tang ;

Wu, Liang-cai ;

Liu, Bo ;

Feng, Song-lin ;

Chen, Bomy .

APPLIED SURFACE SCIENCE, 2008, 254 (08) :2281-2284

[8] Influence of Bi doping upon the phase change characteristics of Ge2Sb2Te5 [J].

Wang, K ;

Wamwangi, D ;

Ziegler, S ;

Steimer, C ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5557-5562

[9] Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage [J].

Wang, K ;

Steimer, C ;

Wamwangi, D ;

Ziegler, S ;

Wuttig, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (08) :1611-1616

[10] Phase change behavior in titanium-doped Ge2Sb2Te5 films [J].

Wei, S. J. ;

Zhu, H. F. ;

Chen, K. ;

Xu, D. ;

Li, J. ;

Gan, F. X. ;

Zhang, X. ;

Xia, Y. J. ;

Li, G. H. .

APPLIED PHYSICS LETTERS, 2011, 98 (23)

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