Multifield Control of Domains in a Room-Temperature Multiferroic 0.85BiTi0.1Fe0.8Mg0.1O3-0.15CaTiO3 Thin Film

被引:14
作者
Jia, Tingting [1 ,2 ]
Fan, Ziran [1 ,4 ]
Yao, Junxiang [1 ]
Liu, Cong [1 ]
Li, Yuhao [1 ]
Yu, Junxi [1 ]
Fu, Bi [1 ]
Zhao, Hongyang [4 ]
Osada, Minoru [2 ]
Esfahani, Ehsan Nasr [5 ]
Yang, Yaodong [6 ,7 ]
Wang, Yuanxu [8 ]
Li, Jiang-Yu [1 ,5 ]
Kimura, Hideo [2 ]
Cheng, Zhenxiang [1 ,3 ,8 ]
机构
[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Key Lab Nanobiomech, Shenzhen 518055, Guangdong, Peoples R China
[2] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
[3] Univ Wollongong, Inst Superconducting & Elect Mat, Innovat Campus, North Wollongong, NSW 2500, Australia
[4] Wuhan Inst Technol, Dept Mat Sci & Engn, Hubei Key Lab Plasma Chem & Adv Mat, 206 Guanggu First Rd, Wuhan 430205, Hubei, Peoples R China
[5] Univ Washington, Dept Mech Engn, Seattle, WA 98195 USA
[6] Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Shaanxi, Peoples R China
[7] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Shaanxi, Peoples R China
[8] Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectricity; magnetism; domain switching; morphotropic phase boundary; thin film; POLARIZATION;
D O I
10.1021/acsami.8b05289
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Single-phase materials that combine electric polarization and magnetization are promising for applications in multifunctional sensors, information storage, spintronic devices, etc. Following the idea of a percolating network of magnetic ions (e.g., Fe) with strong superexchange interactions within a structural scaffold with a polar lattice, a solid solution thin film with perovskite structure at a morphotropic phase boundary with a high level of Fe atoms on the B site of perovskite structure is deposited to combine both ferroelectric and ferromagnetic ordering at room temperature with magnetoelectric coupling. In this work, a 0.85Bi-Ti0.1Fe0.8 Mg0.1O3-0.15CaTiO(3) thin film has been deposited by pulsed laser deposition (PLD). Both the ferroelectricity and the magnetism were characterized at room temperature. Large polarization and a large piezoelectric effective coefficient d(33) were obtained. Multifield coupling of the thin film has been characterized by scanning force microscopy. Ferroelectric domains and magnetic domains could be switched by magnetic field (H), electric field (E), mechanical force (F), and, indicating that complex cross-coupling exists among the electric polarization, magnetic ordering and elastic deformation in 0.85Bi-Ti0.1Fe0.8Mg0.1O3-0.15CaTiO(3) thin film at room temperature. This work also shows the possibility of writing information with electric field, magnetic field, and mechanical force and then reading data by magnetic field. We expect that this work will benefit information applications.
引用
收藏
页码:20712 / 20719
页数:8
相关论文
共 23 条
[1]   Origin of morphotropic phase boundaries in ferroelectrics [J].
Ahart, Muhtar ;
Somayazulu, Maddury ;
Cohen, R. E. ;
Ganesh, P. ;
Dera, Przemyslaw ;
Mao, Ho-Kwang ;
Hemley, Russell J. ;
Ren, Yang ;
Liermann, Peter ;
Wu, Zhigang .
NATURE, 2008, 451 (7178) :545-U2
[2]   Multiferroics:: Towards a magnetoelectric memory [J].
Bibes, Manuel ;
Barthelemy, Agnes .
NATURE MATERIALS, 2008, 7 (06) :425-426
[3]   A pure bismuth a site polar perovskite synthesized at ambient pressure [J].
Bridges, Craig A. ;
Allix, Mathieu ;
Suchomel, Matthew R. ;
Kuang, Xiaojun ;
Sterianou, Iasmi ;
Sinclair, Derek C. ;
Rosseinsky, Matthew J. .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2007, 46 (46) :8785-8789
[4]   Electrical Control of Multiferroic Orderings in Mixed-Phase BiFeO3 Films [J].
Chen, Yi-Chun ;
He, Qing ;
Chu, Feng-Nan ;
Huang, Yen-Chin ;
Chen, Jhih-Wei ;
Liang, Wen-I ;
Vasudevan, Rama K. ;
Nagarajan, Valanoor ;
Arenholz, Elke ;
Kalinin, Sergei V. ;
Chu, Ying-Hao .
ADVANCED MATERIALS, 2012, 24 (22) :3070-3075
[5]   Interface Strain-Induced Multiferroicity in a SmFeO3 Film [J].
Cheng, Zhenxiang ;
Hong, Fang ;
Wang, Yuanxu ;
Ozawa, Kiyoshi ;
Fujii, Hiroki ;
Kimura, Hideo ;
Du, Yi ;
Wang, Xiaolin ;
Dou, Shixue .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (10) :7356-7362
[6]   Magnetoelectric Devices for Spintronics [J].
Fusil, S. ;
Garcia, V. ;
Barthelemy, A. ;
Bibes, M. .
ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 44, 2014, 44 :91-116
[7]   Giant tunnel electroresistance for non-destructive readout of ferroelectric states [J].
Garcia, V. ;
Fusil, S. ;
Bouzehouane, K. ;
Enouz-Vedrenne, S. ;
Mathur, N. D. ;
Barthelemy, A. ;
Bibes, M. .
NATURE, 2009, 460 (7251) :81-84
[8]   Deterministic switching of ferromagnetism at room temperature using an electric field [J].
Heron, J. T. ;
Bosse, J. L. ;
He, Q. ;
Gao, Y. ;
Trassin, M. ;
Ye, L. ;
Clarkson, J. D. ;
Wang, C. ;
Liu, Jian ;
Salahuddin, S. ;
Ralph, D. C. ;
Schlom, D. G. ;
Iniguez, J. ;
Huey, B. D. ;
Ramesh, R. .
NATURE, 2014, 516 (7531) :370-+
[9]  
Hill NA, 2000, J PHYS CHEM B, V104, P6694, DOI 10.1021/jpc00114x
[10]   Large Resistive Switching in Ferroelectric BiFeO3 Nano-Island Based Switchable Diodes [J].
Hong, Sahwan ;
Choi, Taekjib ;
Jeon, Ji Hoon ;
Kim, Yunseok ;
Lee, Hosang ;
Joo, Ho-Young ;
Hwang, Inrok ;
Kim, Jin-Soo ;
Kang, Sung-Oong ;
Kalinin, Sergei V. ;
Park, Bae Ho .
ADVANCED MATERIALS, 2013, 25 (16) :2339-2343