A Comparative Study of Two Iterative Linear Solvers Applied to Semiconductor Device Simulation

被引：0

作者：

Seoane, Natalia ^{[1
]}

Garcia-Loureiro, Antonio ^{[1
]}

Aldegunde, Manuel ^{[1
]}

机构：

[1] Univ Santiago de Compostela, Dept Elect & Comp Sci, Santiago De Compostela 15782, Spain

来源：

COMPUTATIONAL METHODS IN SCIENCE AND ENGINEERING, VOL 2: ADVANCES IN COMPUTATIONAL SCIENCE | 2009年 / 1148卷

关键词：

Semiconductor device simulation; domain decomposition methods; incomplete LU factorisations; Krylov subspace methods;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

This paper presents an analysis of resolution methods and preconditioning techniques used for the solution of the sparse linear systems of equations arising from the semiconductor device simulation. This study has been carried out using a 3D parallel drif-diffusion device simulator for Implant Free heteroestructure MOSFETs.

引用

页码：218 / 221

页数：4