Exfoliated multilayer MoTe2 field-effect transistors

被引：175

作者：

Fathipour, S. ^{[1
]}

Ma, N. ^{[1
]}

Hwang, W. S. ^{[2
]}

Protasenko, V. ^{[1
]}

Vishwanath, S. ^{[1
]}

Xing, H. G. ^{[1
]}

Xu, H. ^{[1
]}

Jena, D. ^{[1
]}

Appenzeller, J. ^{[3
]}

Seabaugh, A. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Korea Aerosp Univ, Dept Mat Engn, Gyeonggi 412791, South Korea

[3] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 19期

基金：

美国国家科学基金会;

关键词：

MOS2;

D O I：

10.1063/1.4901527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of multilayer exfoliated MoTe2 field-effect transistors (FETs) on SiO2 were investigated for channel thicknesses from 6 to 44 monolayers (MLs). All transistors showed p-type conductivity at zero back-gate bias. For channel thicknesses of 8 ML or less, the transistors exhibited ambipolar characteristics. ON/OFF current ratio was greatest, 1 x 10(5), for the transistor with the thinnest channel, 6 ML. Devices showed a clear photoresponse to wavelengths between 510 and 1080 nm at room temperature. Temperature-dependent current-voltage measurements were performed on a FET with 30 layers of MoTe2. When the channel is turned-on and p-type, the temperature dependence is barrier-limited by the Au/Ti/MoTe2 contact with a hole activation energy of 0.13 eV. A long channel transistor model with Schottky barrier contacts is shown to be consistent with the common-source characteristics. (C) 2014 AIP Publishing LLC.

引用

页数：3

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