TDDB reliability assessment and burn-in for thin gate oxides

被引：0

作者：

Anderson, SGH ^{[1
]}

Moosa, MS ^{[1
]}

Fowler, TC ^{[1
]}

Kawasaki, H ^{[1
]}

机构：

[1] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

来源：

INTERCONNECT AND CONTACT METALLIZATION | 1998年 / 97卷 / 31期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A methodology is developed which combines intrinsic reliability data with hypothetical early failure distributions to determine robust burn-in conditions for thin gate oxides. TDDB data for 50 and 35 Angstrom gate oxides are fitted to a model for intrinsic reliability that includes area, voltage and temperature dependencies. Measurements after simulated burn-in, where transistor arrays with intrinsically good gate oxide were stressed as capacitors, indicate that representative transistor parameters remain within specification.

引用

页码：218 / 227

页数：10