Assessment of surface roughness of substrates subjected to plasma-chemical etching

被引：1
|
作者：
Glyanko, M. S. [1 ]
Volkov, A. V. [1 ]
Fomchenkov, S. A. [1 ]
机构：
[1] Samara State Aerosp Univ Natl Res Univ, Dept Nanoengn, Samara 443086, Russia
来源：
1ST INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN 2014 ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES | 2014年 / 541卷
关键词：
D O I：
10.1088/1742-6596/541/1/012100
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The model based on fractional Brownian surface for substrate surface roughness assessment subjected to plasma-chemical etching is proposed.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Pressure controlled surface roughness of SiC plasma etching
    Kim, B
    Lee, BT
    SURFACE ENGINEERING, 2004, 20 (05) : 391 - 395
  • [22] Formation of a thick modified surface layer in silicon upon plasma-chemical etching with fluorine-containing radicals
    Kurchatov Inst Research Cent, Moscow, Russia
    Phys Chem Mech Surf, 12 (1397-1407):
  • [23] EFFECTS OF EDGE ROUGHNESS ON SURFACE CHARGING IN PLASMA ETCHING
    Zhang, Peng
    SURFACE REVIEW AND LETTERS, 2023,
  • [24] Chromium mask for plasma-chemical etching of AlxGa1 − xN layers
    D. Yu. Protasov
    N. R. Vitsina
    N. A. Valisheva
    F. N. Dul’tsev
    T. V. Malin
    K. S. Zhuravlev
    Technical Physics, 2014, 59 : 1356 - 1359
  • [25] The Formation of a Topological Drawing in a Polycrystalline Diamond Layer by the Plasma-Chemical Etching Method
    Kraynova, Kseniya Y.
    Mishanin, Aleksandr E.
    Pecherskaya, Ekaterina A.
    Shepeleva, Yuliya, V
    2019 20TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2019), 2019, : 44 - 47
  • [26] On formation of a modified volume layer in silicon in plasma-chemical etching by fluorine radicals
    Molchanova, S.A.
    Panov, A.D.
    Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 1994, (12): : 60 - 68
  • [27] Laser Plasma-Chemical Etching of Polycrystalline Diamond and Single-Crystal Sapphire
    Red’kin S.V.
    Mal’tsev P.P.
    Kondratenko V.S.
    Yuzeeva N.A.
    Russian Microelectronics, 2022, 51 (06): : 435 - 438
  • [28] Numerical Modeling of Two RF Discharge Structure in Plasma-Chemical Etching Reactor
    Grigoryev, Yurii N.
    Gorobchuk, Aleksey G.
    2013 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), 2013,
  • [29] Carbon Dioxide Reforming of Methane on a Cobalt Catalyst Subjected to Plasma-Chemical Treatment
    Platonov, E. A.
    Bratchikova, I. G.
    Yagodovskii, V. D.
    Murga, Z. V.
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A, 2017, 91 (08) : 1422 - 1426
  • [30] Simulation of the Polymerization Process on a Silicon Surface under Plasma-Chemical Etching in CF4/H-2
    Grigoryev, Yu. N.
    Gorobchuk, A. G.
    JOURNAL OF SURFACE INVESTIGATION, 2015, 9 (01): : 184 - 189
12345