Neuromorphic Implementation of Logic Functions Based on Parallel Dual-Gate Thin-Film Transistors

被引：12

作者：

Hu, Yushen ^{[1
,2
]}

Wang, Yuqi ^{[1
]}

Lei, Tengteng ^{[1
]}

Wang, Fei ^{[2
]}

Wong, Man ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

[2] Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 05期

关键词：

Thin film transistors; Logic gates; Capacitors; Logic functions; Leakage currents; Electrodes; Switches; Thin-film transistor; neuromorphic computing; IGZO; quasi-static memory; dual-gate;

D O I：

10.1109/LED.2022.3164684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Composed of computation units each containing a parallel, dual-gate (DG) thin-film transistor (TFT) and a memory capacitor addressed by an access TFT, a neuromorphic circuit implementing fundamental AND and OR logic functions is realized and characterized. The exceptionally low leakage current of a TFT built on indium-gallium-zinc oxide (IGZO) allows the capacitor to be used as a quasi-static memory element. Appropriate weight signals for the realization of the two logic functions are obtained using a gradient-descent training algorithm. The circuit can be configured to execute one of the two functions by the setting of the weight signals.

引用

页码：741 / 744

页数：4

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