Ultrahigh sensitive MoTe2 phototransistors driven by carrier tunneling

被引：114

作者：

Yin, Lei ^{[1
]}

Zhan, Xueying ^{[1
]}

Xu, Kai ^{[1
]}

Wang, Feng ^{[1
]}

Wang, Zhenxing ^{[1
]}

Huang, Yun ^{[1
]}

Wang, Qisheng ^{[1
]}

Jiang, Chao ^{[1
]}

He, Jun ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Nanosyst & Hierarch Fabricat, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 04期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

N-TYPE; 2-DIMENSIONAL MATERIALS; METAL CONTACTS; BAND-GAP; TRANSISTORS; MOS2; PHOTODETECTORS; SINGLE; GRAPHENE; VACANCY;

D O I：

10.1063/1.4941001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transition metal dichalcogenides (TMDs) demonstrate great potential in electronic and optoelectronic applications. However, the device performance remains limited because of the poor metal contact. Herein, we fabricate a high-performance ultrathin MoTe2 phototransistor. By introducing an electron tunneling mechanism, electron injection from electrode to channel is strikingly enhanced. The electron mobility approaches 25.2 cm(2) V-1 s(-1), better than that of other back-gated MoTe2 FETs. Through electrical measurements at various temperatures, the electron tunneling mechanism is further confirmed. The MoTe2 phototransistor exhibits very high responsivity up to 2560 A/W which is higher than that of most other TMDs. This work may provide guidance to reduce the contact resistance at metal-semiconductor junction and pave a pathway to develop high-performance optoelectronic devices in the future. (C) 2016 AIP Publishing LLC.

引用

页数：5

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