Surface structure of cesium adsorption on the Si(001) 2 x 1 surface

被引:21
作者
Hamamatsu, H
Yeom, HW
Yokoyama, T
Kayama, T
Ohta, T
机构
[1] Univ Tokyo, Grad Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 113, Japan
[2] Univ Tokyo, Fac Sci, Res Ctr Spectrochem, Bunkyo Ku, Tokyo 113, Japan
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 19期
关键词
D O I
10.1103/PhysRevB.57.11883
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The detailed surface structure of Cs adsorption on the Si(001) 2X1 surface was investigated by means of tensor low-energy electron diffraction analysis. Various adsorption sites were considered including the recently proposed possibility of asymmetric dimer reconstruction of the Si top layer. We confirm the structure model with double-layer adsorbates and symmetric Si dimers underneath for the saturation coverage Cs adsorption. The major structural parameters within this structure are discussed in terms of the covalent bonding between the adsorbates and Si surface atoms. [S0163-1829(98)06016-0].
引用
收藏
页码:11883 / 11886
页数:4
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