High Performance Si Nanowire TFTs With Ultrahigh on/off Current Ratio and Steep Subthreshold Swing

被引：21

作者：

Yin, Han ^{[1
]}

Yang, Huafeng ^{[1
]}

Xu, Shun ^{[1
]}

Pan, Danfeng ^{[1
]}

Xu, Jun ^{[1
]}

Chen, Kunji ^{[1
]}

Yu, Linwei ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Self-assembly growth; thin film transistors; silicon nanowires; THIN-FILM TRANSISTORS; SILICON NANOWIRES; P-TYPE; JUNCTION;

D O I：

10.1109/LED.2019.2953116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Seeking high drive current, low leakage and swift switching is critical in developing high performance thin film transistors (TFTs) for portable and flexible displays. In this work, we report on the fabrication of high performance TFTs, based on orderly in-plane silicon nanowire (SiNW) array grown at 350 degrees C, which demonstrate a high ON/OFF current ratio of 5 x 10(8), with a steep subthreshold swing (SS) of 100 mV/dec and a hole mobility of 80 cm(2)/Vs. The high on current of 10 mu A has been obtained under 0.75 V bias for a channel consisting of only 10 parallel SiNWs, with a mean diameter of similar to 66 nm and channel length of 2 mu m. In addition, SiNW inverters are also constructed, operating at a drive voltage of 2 V and achieving a gain above 11. These results highlight the geometric advantage of the SiNW TFTs in constructing a new generation of high performance, low cost and scalable display logics and flexible electronics.

引用

页码：46 / 49

页数：4

共 39 条

[1] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].