Broad Spectral Response of Se-Doped SnS Nanorods Synthesized through Electrodeposition

被引：42

作者：

Jamali-Sheini, Farid ^{[1
]}

Niknia, Farhad ^{[2
]}

Cheraghizade, Mohsen ^{[2
]}

Yousefi, Ramin ^{[3
]}

Mahmoudian, Mohammad Reza ^{[4
]}

机构：

[1] Islamic Azad Univ, Ahvaz Branch, Dept Phys, Adv Surface Engn & Nano Mat Res Ctr, Ahvaz, Iran

[2] Islamic Azad Univ, Ahvaz Branch, Young Researchers & Elite Club, Ahvaz, Iran

[3] IAU, Masjed Soleiman Branch, Dept Phys, Masjed Soleiman, Iran

[4] Shahid Sherafat Univ Farhangian, Dept Chem, Tehran 15916, Iran

来源：

CHEMELECTROCHEM | 2017年 / 4卷 / 06期

关键词：

Se-doped SnS thin films; electrochemical deposition; optical investigation; n-type conductivity; electrical and photoswitching properties; THIN-FILMS; THERMAL EVAPORATION; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; HYDROTHERMAL SYNTHESIS; GROWTH-TEMPERATURE; HIGH-PERFORMANCE; BAND-STRUCTURE; FABRICATION; NANOPARTICLES;

D O I：

10.1002/celc.201600826

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Un- and Se-doped nanostructured SnS thin films were synthesized (deposited) on FTO-coated glass substrates using an electrodeposition method. A study of the crystallinity indicated an orthorhombic phase with a grain size of 54-75 nm. Morphological features of the films showed a well-developed rod structure (less than 100 nm). Optical energy band gaps in the range of 1.26-1.46 eV were estimated for the deposited films. The effect of Se as a dopant on the determination of the optoelectronic and conductivity conversion from p- to n-type nanostructured SnS thin films was investigated. In addition, an n-type Se-SnS film was obtained at lower concentrations of Se. This technique is suggested to control the electrical conductivity of deposited films to be applied in photoswitching-based devices.

引用

页码：1478 / 1486

页数：9

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