Effect of annealing on electrical and optical properties of TiN thin films

被引：0

作者：

Kovaliuk, Taras T. ^{[1
,2
]}

Solovan, Mykhailo M. ^{[1
]}

Mostovyi, Andrii, I ^{[1
]}

Orletskyi, Ivan G. ^{[1
]}

机构：

[1] Chernivtsi Natl Univ, Dept Elect & Energy Engn, 2 Kotsyubynsky Str, UA-58012 Chernovtsy, Ukraine

[2] Charles Univ Prague, Fac Math & Phys, Ke Karlovu 5, Prague 12116 2, Czech Republic

来源：

FIFTEENTH INTERNATIONAL CONFERENCE ON CORRELATION OPTICS | 2021年 / 12126卷

关键词：

thin films; TiN; reactive magnetron sputtering; annealing; optical properties;

D O I：

10.1117/12.2615178

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

TiN thin films were deposited are deposited by DC reactive magnetron sputtering. The effect of annealing on the electrical and optical properties of the thin films was investigated. Temperature dependences of the resistance R of the TiN films were measured within the temperature range T divided by 295-420 K. There was established that all samples under investigation had n-type of conductivity. Based on the dependences (ahv)(2) = f(hv), the presence of direct allowed interband optical transitions in the TiN thin films is established and the optical band gap values before and after annealing are determined. Annealing in nitrogen atmospheres led to an increase in the optical width of the band gap, which may be due to deviations from the stoichiometric composition of thin TiN films during heat treatment.

引用

页数：6

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