Luminescence enhancement from hydrogen-passivated self-assembled quantum dots

被引：47
作者：
Le Ru, EC [1 ]
Siverns, PD [1 ]
Murray, R [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2BZ, England
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期
关键词：
D O I：
10.1063/1.1318931
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have measured a large increase (by a factor of up to 50) in the room-temperature emission of InAs/GaAs self-assembled quantum dots subjected to a hydrogen-passivation treatment. Smaller enhancements were measured at low temperatures. We tentatively attribute the improved optical signal to passivation of defects within the GaAs matrix and wetting layer adjacent to the dots. Annealing studies show that these benefits are lost following annealing at temperatures above 600 degrees C for 5 min. (C) 2000 American Institute of Physics. [S0003-6951(00)03242-3].
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页码：2446 / 2448
页数：3
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