Fabrication and characteristics of silicon bridge magnetic sensor based on cantilever beam

被引：0

作者：

Li, Lei ^{[1
]}

Zhao, Xiaofeng ^{[1
,2
]}

Yu, Yang ^{[1
]}

Wen, Dianzhong ^{[1
]}

Cao, Jingya ^{[1
]}

Tian, Lei ^{[2
]}

机构：

[1] Heilongjiang Univ, Coll Heilongjiang Prov, Key Lab Elect Engn, Harbin 150080, Peoples R China

[2] 49th Res Inst China Elect Technology Grp Corp, Harbin 150001, Peoples R China

来源：

MICRO-NANO TECHNOLOGY XV | 2014年 / 609-610卷

关键词：

Silicon bridge; magnetic sensor; cantilever beam; nano-polysilicon thin-film transistors; ANSYS; FIELD SENSOR;

D O I：

10.4028/www.scientific.net/KEM.609-610.1088

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A silicon bridge magnetic sensor based on cantilever beam is presented in this paper. The sensor is composed of the Wheatstone bridge that made up of nano-polysilicon thin-film transistors (TFTs) and a ferromagnetic magnet adhered to the free end of cantilever beam. Through building the simulation model, the finite element analysis of the sensor is carried out by using ANSYS software. The results show that this sensor can realize the measurement to the external magnetic field. According to the simulation results, fabrication and packaging of the sensor chip are achieved by using the micro electromechanical system (MEMS) technology. Experiment result shows that when the supply voltage is 3.0 V, the sensitivity of the sensor is 94 mV/T.

引用

页码：1088 / +

页数：2

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