A Simulation Study of Self-Heating Effect on Junctionless Nanowire Transistors

被引：0

作者：

Mariniello, G. ^{[1
]}

Pavanello, M. A. ^{[1
]}

机构：

[1] Ctr Univ FEI Sao Bernardo do Campo, Dept Elect Engn, Sao Bernardo Do Campo, Brazil

来源：

2014 29TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO) | 2014年

关键词：

Junctionless; self-heating; multiple gate; nanowire;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The presence of buried oxide electrically isolating the active silicon region to the substrate in SOI devices leads to better performance than the conventional MOSFETs. However, the thermal resistance associated to this buried oxide causes the self-heating effect which degrades the drain current level. This paper aims at analyzing the self-heating effects influence on junction less nanowire transistors based on three-dimensional numerical simulations.

引用

页数：4

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