Design of bottom mirrors for resonant cavity enhanced GaAs homojunction far-infrared detectors

被引:4
作者
Zhang, YH [1 ]
Luo, HT [1 ]
Shen, WZ [1 ]
机构
[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China
关键词
D O I
10.1051/epjap:2003036
中图分类号
O59 [应用物理学];
学科分类号
摘要
The design of bottom mirrors for resonant cavity enhanced (RCE) GaAs homojunction far-infrared (FIR) detectors has been investigated in the framework of three possible projects. The results show that neither the bottom contact layer of the detector itself nor the distributed Bragg reflector, which has been widely employed in near- and mid-infrared detectors, can perform well as bottom mirrors for FIR detectors. A new kind of bottom mirrors based on undoped/doped GaAs layers is proposed and optimized. Though the absorption cannot be neglected, the bottom mirror shows a satisfactory effect. The resulting absorption probability (as well as the quantum efficiency) in the detector cavity for this kind of RCE p-GaAs FIR detector is three times of the normal p-GaAs homojunction FIR detector demonstrated experimentally. This kind of bottom mirror design opens a new way to increase the quantum efficiency in homojunction FIR detectors.
引用
收藏
页码:165 / 170
页数:6
相关论文
共 15 条
[1]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[2]  
KLEIN MV, 1986, OPTICS, P295
[3]  
KNITTL Z, 1976, OPTICS THIN FILMS, P35
[4]   Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications [J].
Korotkov, AL ;
Perera, AGU ;
Shen, WZ ;
Herfort, J ;
Ploog, KH ;
Schaff, WJ ;
Liu, HC .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (06) :3295-3300
[5]   Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz [J].
Lenox, C ;
Nie, H ;
Yuan, P ;
Kinsey, G ;
Homles, AL ;
Streetman, BG ;
Campbell, JC .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (09) :1162-1164
[6]   Photon absorption in resonant-cavity-enhanced GaAs far-infrared detectors [J].
Luo, HT ;
Zhang, YH ;
Shen, WZ ;
Ding, Y ;
Yu, G .
APPLIED OPTICS, 2002, 41 (31) :6537-6542
[7]  
MACLEOD HA, 1986, THIN FILM OPTICAL FI, P52
[8]   High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product [J].
Nie, H ;
Anselm, KA ;
Hu, C ;
Murtaza, SS ;
Streetman, BG ;
Campbell, JC .
APPLIED PHYSICS LETTERS, 1997, 70 (02) :161-163
[9]   Demonstration of Si homojunction far-infrared detectors [J].
Perera, AGU ;
Shen, WZ ;
Liu, HC ;
Buchanan, M ;
Tanner, MO ;
Wang, KL .
APPLIED PHYSICS LETTERS, 1998, 72 (18) :2307-2309
[10]   Bias effects in high performance GaAs homojunction far-infrared detectors [J].
Shen, WZ ;
Perera, AGU ;
Liu, HC ;
Buchanan, M ;
Schaff, WJ .
APPLIED PHYSICS LETTERS, 1997, 71 (18) :2677-2679