A Potential Red-Emitting Phosphor BaZrGe3O9:Eu3+ for WLED and FED Applications: Synthesis, Structure, and Luminescence Properties

A variety of Eu3+-activated BaZrGe(3)O(9)phosphors was synthesized via solid-state reaction. The phase formation of BaZrGe3O9:Eu3+ samples was verified by powder F, X-ray diffraction analysis, while Rietveld refinement methods was used to confirm the crystal structure. The electronic structure and characteristic photoluminescence as well as rx z cathodoluminescence properties were researched in detail. The samples show strong absorption at 394 nm, which matches well with the commercial near-ultraviolet chips. Under 394 nm excitation, the phosphors exhibit the characteristic emissions of Eu3+ ions consistent with the D-5(0)-F-7(J) transitions. Then we investigated the thermal stability detailedly.. The temperature-dependent photoluminescence emission spectra suggest that the obtained phosphors have favorable thermal stability. A white light-emitting diode (WLED) lamp with low correlated color temperature and good color render index was fabricated with blue-emitting BaMgAl10O7:Eu2+, green-emitting Sr2SiO4:Eu2+ (commercial), and red-emitting BaZrGe3O9:Eu3+ phosphors in near-ultraviolet light-emitting diodes (lambda(max) = 395 nni) as well. Furthermore, the phosphor-also exhibits red emission with high resistance and high current saturation under low voltage electron bombardment. It has better degradation resistance than the commercial Y2O3:Eu phosphor. All the results manifest that the Ba0.88Eu0.08ZrGe3O9 phosphor can be an eligible red-emitting phosphor candidate for WLEDs and field-emission displays.