Enhanced magnetization in epitaxial SrRuO3 thin films via substrate-induced strain

被引：41

作者：

Grutter, Alexander ^{[1
,2
]}

Wong, Franklin ^{[1
]}

Arenholz, Elke ^{[3
]}

Liberati, Marco ^{[3
]}

Suzuki, Yuri ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 09期

关键词：

SINGLE-CRYSTAL; DIFFRACTION;

D O I：

10.1063/1.3360345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial SrRuO3 thin films were grown on SrTiO3, (LaAlO3)(0.3)(Sr2AlTaO6)(0.7), and LaAlO3 substrates inducing different compressive strains. Coherently strained SrRuO3 films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 mu(B) per formula unit. A comparison of (001) SrRuO3 films on each substrate indicates that strained films have consistently higher saturated moments than corresponding relaxed films, which exhibit bulk moments. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide. (C) 2010 American Institute of Physics. [doi:10.1063/1.3360345]

引用

页数：3

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