Effects of light on ferroelectric polarization and leakage current

被引:10
|
作者
Borkar, Hitesh [1 ,2 ]
Kumar, Ashok [1 ,2 ]
机构
[1] CSIR Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
[2] CSIR NPL Campus, Acad Sci & Innovat Res AcSIR, Dr KS Krishnan Road, New Delhi 110012, India
关键词
D O I
10.1016/j.vacuum.2018.03.062
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the enhancement of polarization in polycrystalline ferroelectric thin films under illumination of light. The (Pb0.6Li0.2Bi0.2) (Zr0.2Ti0.8)O-3 (PLBZT) thin films were fabricated on a Pt/TiO2/SiO2/Si (100) substrate by pulsed-laser deposition (PLD) technique. The illumination of weak monochromatic light having a wavelength comparable to the bandgap of PLBZT showed the development of non-equilibrium charge carriers which enhance switchable polarization and displacement current. A Positive-up Negative-down (PUND) analysis also supports the enhancement of switchable polarization under illumination. The fatigue test indicates nearly 20-30% decrease in polarization after a long time write and read cycles. These results may provide an extra degree of freedom to create electrical WRITE and optical READ logic states. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:91 / 95
页数:5
相关论文
共 50 条
  • [1] Note on the polarization dependence of leakage current in ferroelectric thin films
    Scott, J.F.
    Integrated Ferroelectrics, 1999, 23 (01): : 187 - 190
  • [2] A note on the polarization dependence of leakage current in ferroelectric thin films
    Scott, JF
    INTEGRATED FERROELECTRICS, 1999, 23 (1-4) : 187 - 190
  • [3] Effects of the Interfacial Layer on the Leakage Current and Hysteresis Behaviour of Ferroelectric Devices
    Tan, Tiang Teck
    Wu, Tian-Li
    Coignus, Jean
    Martin, Simon
    Grenouillet, Laurent
    Padovani, Andrea
    Puglisi, Francesco Maria
    La Torraca, Paolo
    Shubhakar, Kalya
    Raghavan, Nagarajan
    Fey, Kin Leong
    2024 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, IPFA 2024, 2024,
  • [4] Gate Leakage Current Modeling in Ferroelectric FET
    Rasool, Raheela
    Najeed-Ud-Din
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 247 - 250
  • [5] Leakage current and fatigue in ceramic ferroelectric oxides
    Dawber, M
    Scott, JF
    EURO CERAMICS VII, PT 1-3, 2002, 206-2 : 1309 - 1312
  • [6] Interface effect on leakage current of ferroelectric film
    Zhang, W. Q.
    Yang, Q.
    Zhou, Y. C.
    Cao, J. X.
    COMPUTATIONAL MATERIALS SCIENCE, 2016, 115 : 120 - 124
  • [7] Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission
    Li, Xiaoran
    van Breemen, Albert J. J. M.
    Khikhlovskyi, Vsevolod
    Smits, Edsger C. P.
    Kemerink, Martijn
    Broer, Dirk J.
    Gelinck, Gerwin H.
    ORGANIC ELECTRONICS, 2012, 13 (09) : 1742 - 1749
  • [8] Cationic Vacancies Induced Enhanced Light Absorption with Controlled Leakage Current in Perovskite Ferroelectric Oxides
    Sarath, N. V.
    Murugavel, Pattukkannu
    ACS APPLIED ENGINEERING MATERIALS, 2024, 2 (04): : 1070 - 1081
  • [9] Modelling of leakage current in ferroelectric thin film capacitors
    Dawber, Matthew
    Scott, J.F.
    Ferroelectrics, 2001, 260 (01) : 143 - 148
  • [10] Strain control of the leakage current of the ferroelectric thin films
    Wen Juan-Hui
    Yang Qiong
    Cao Jue-Xian
    Zhou Yi-Chun
    ACTA PHYSICA SINICA, 2013, 62 (06)