The Electrical Properties of Co-Doped ZnO Thin Films

被引：0
作者：
Hamid, H. A. [1 ]
Abdullah, M. J. [1 ]
Aziz, A. A. [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
来源：
INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY 2007 | 2010年 / 1217卷
关键词：
Zinc oxide; Thin film; Co-doping; SAPPHIRE; GROWTH;
D O I：
10.1063/1.3377806
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Codoped ZnO thin films were prepared on silicon (111) substrates by cosputtering of aluminium rods and zinc target using DC magnetron sputtering followed by heat treatment at 400 degrees C for 1 hour at different ratios of oxygen and nitrogen gas. Results indicate that gas ratios influenced the film conduction properties, which had the lowest resistivity of 7.985 x 10(-3) cm(-3) and highest carrier concentration of 6.89 x 10(21)cm(-3).
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收藏
页码：171 / 175
页数：5
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