Graded-band-gap semiconductors:: the possibilities for improvement of p-n junction performance

被引：0

作者：

Sokolovskii, B ^{[1
]}

Yasnytskyi, R ^{[1
]}

机构：

[1] Ivan Franko Natl Univ, UA-79602 Lvov, Ukraine

来源：

PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2003年 / 744卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper theoretically analyzes properties of graded-band-gap (GBG) p-n structures in which band gap linearly enlarges with increasing the distance from the junction metallurgical edge. It is shown that by means of band-gap grading one can significantly reduce the diffusion reverse current caused by carrier thermal generation in the structure base regions and Ohmic contacts. The numerical estimations have been made for the case of p-n junction on the basis of CdHgTe solid solution.

引用

页码：463 / 468

页数：6

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