Photoluminescence study of bare freestanding gallium arsenide nanowires grown by vapor-liquid-solid method

被引：0

作者：

Zhang, Guoqiang ^{[1
]}

Tateno, Kouta ^{[1
]}

Sanada, Haruki ^{[1
]}

Tawara, Takehiko ^{[1
]}

Gotoh, Hideki ^{[1
]}

Nakano, Hidetoshi ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2 | 2009年

关键词：

nanowire; photoluminescence; quantum wire; GaAs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied size-dependent optical properties of bare freestanding gallium arsenide nanowires grown by vapor-liquid-solid method. In contrast to blueshift of luminescence peaks usually induced by band filling, redshift was observed for small quantum wires.

引用

页码：724 / 725

页数：2

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