Insights into radiation displacement defect in an insulated-gate bipolar transistor

被引：3

作者：

Kim, Kihyun ^{[1
,2
,3
]}

Kim, Jungsik ^{[4
,5
]}

机构：

[1] Jeonbuk Natl Univ, Div Elect Engn, Jeonju 54896, South Korea

[2] Jeonbuk Natl Univ, Future Semicond Convergence Technol Res Ctr, Jeonju 54896, South Korea

[3] Jeonbuk Natl Univ, ICT Convergence Res Ctr, Jeonju 54896, South Korea

[4] Gyeongsang Natl Univ, Dept Elect Engn, Jinju 52828, South Korea

[5] Gyeongsang Natl Univ, Engn Res Inst ERI, Jinju 52828, South Korea

来源：

AIP ADVANCES | 2021年 / 11卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

All Open Access; Gold;

D O I：

10.1063/5.0041444

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology. DC characteristics, breakdown voltage, and power dissipation are analyzed according to the position, energy, and types of trap caused by the radiation effect. The on-current is degraded by 100% due to displacement defect, which is generated near the emitter-gate region. An acceptor-like trap with E-c - 0.4 eV shows the most significant degradation compared to an acceptor-like trap with E-c - 0.2 eV and a donor-like trap with E-v + 0.2 eV. At 300 K, the breakdown voltage is unaffected by radiation displacement defects but is significantly reduced in a high-temperature environment (425 K) because the depletion width becomes shorter due to the displacement defect. Power dissipation exhibits immunity to the displacement defect induced by radiation at both room temperature and high temperatures.

引用

页数：6

共 26 条

[1] Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation [J].