Bi2O2Se-Based Memristor-Aided Logic

被引：23

作者：

Liu, Bo ^{[3
]}

Zhao, Yudi ^{[1
]}

Verma, Dharmendra ^{[2
]}

Wang, Le An ^{[3
]}

Liang, Hanyuan ^{[4
]}

Zhu, Hui ^{[3
]}

Li, Lain-Jong ^{[2
,5
]}

Hou, Tuo-Hung ^{[6
,7
]}

Lai, Chao-Sung ^{[2
,8
,9
,10
]}

机构：

[1] Beijing Informat Sci & Technol Univ, Sch Informat & Commun Engn, Beijing 100101, Peoples R China

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan

[3] Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China

[4] Penn State Univ, Sch Elect Engn & Comp Sci, University Pk, PA 16801 USA

[5] Univ Hong Kong, Dept Mech Engn, Hong Kong Isl, Hong Kong 999077, Peoples R China

[6] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[7] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[8] Chang Gung Univ, Artificial Intelligence & Green Technol Res Ctr, Taoyuan 33302, Taiwan

[9] Chang Gung Mem Hosp, Dept Nephrol, Linkou 33305, Taiwan

[10] Ming Chi Univ Technol, Dept Mat Engn, New Taipei 24301, Taiwan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2021年 / 13卷 / 13期

关键词：

Bi2O2Se; RRAM; CAFM; kinetic Monte Carlo; MAGIC; SWITCHING PARAMETER VARIATION; HIGH-MOBILITY; 2-DIMENSIONAL MATERIALS; MEMORY; GRAPHENE; DEVICE; MODEL;

D O I：

10.1021/acsami.1c00177

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

引用

页码：15391 / 15398

页数：8

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