Bi2O2Se-Based Memristor-Aided Logic

被引:23
作者
Liu, Bo [3 ]
Zhao, Yudi [1 ]
Verma, Dharmendra [2 ]
Wang, Le An [3 ]
Liang, Hanyuan [4 ]
Zhu, Hui [3 ]
Li, Lain-Jong [2 ,5 ]
Hou, Tuo-Hung [6 ,7 ]
Lai, Chao-Sung [2 ,8 ,9 ,10 ]
机构
[1] Beijing Informat Sci & Technol Univ, Sch Informat & Commun Engn, Beijing 100101, Peoples R China
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[3] Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
[4] Penn State Univ, Sch Elect Engn & Comp Sci, University Pk, PA 16801 USA
[5] Univ Hong Kong, Dept Mech Engn, Hong Kong Isl, Hong Kong 999077, Peoples R China
[6] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[7] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[8] Chang Gung Univ, Artificial Intelligence & Green Technol Res Ctr, Taoyuan 33302, Taiwan
[9] Chang Gung Mem Hosp, Dept Nephrol, Linkou 33305, Taiwan
[10] Ming Chi Univ Technol, Dept Mat Engn, New Taipei 24301, Taiwan
关键词
Bi2O2Se; RRAM; CAFM; kinetic Monte Carlo; MAGIC; SWITCHING PARAMETER VARIATION; HIGH-MOBILITY; 2-DIMENSIONAL MATERIALS; MEMORY; GRAPHENE; DEVICE; MODEL;
D O I
10.1021/acsami.1c00177
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.
引用
收藏
页码:15391 / 15398
页数:8
相关论文
共 48 条
[1]   Graphene and two-dimensional materials for silicon technology [J].
Akinwande, Deji ;
Huyghebaert, Cedric ;
Wang, Ching-Hua ;
Serna, Martha I. ;
Goossens, Stijn ;
Li, Lain-Jong ;
Wong, H. -S. Philip ;
Koppens, Frank H. L. .
NATURE, 2019, 573 (7775) :507-518
[2]  
Ben Hur R, 2017, ICCAD-IEEE ACM INT, P225, DOI 10.1109/ICCAD.2017.8203782
[3]   Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks [J].
Chen, Shaochuan ;
Mahmoodi, Mohammad Reza ;
Shi, Yuanyuan ;
Mahata, Chandreswar ;
Yuan, Bin ;
Liang, Xianhu ;
Wen, Chao ;
Hui, Fei ;
Akinwande, Deji ;
Strukov, Dmitri B. ;
Lanza, Mario .
NATURE ELECTRONICS, 2020, 3 (10) :638-645
[4]   Functional Demonstration of a Memristive Arithmetic Logic Unit (MemALU) for In-Memory Computing [J].
Cheng, Long ;
Li, Yi ;
Yin, Kang-Sheng ;
Hu, Si-Yu ;
Su, Yu-Ting ;
Jin, Miao-Miao ;
Wang, Zhuo-Rui ;
Chang, Ting-Chang ;
Miao, Xiang-Shui .
ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (49)
[5]   Electrical conduction mechanisms of metal/La2O3/Si structure -: art. no. 103503 [J].
Chiu, FC ;
Chou, HW ;
Lee, JYM .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[6]   Configurable multi-state non-volatile memory behaviors in Ti3C2 nanosheets [J].
Ding, Guanglong ;
Zeng, Kelin ;
Zhou, Kui ;
Li, Zongxiao ;
Zhou, Ye ;
Zhai, Yongbiao ;
Zhou, Li ;
Chen, Xiaoli ;
Han, Su-Ting .
NANOSCALE, 2019, 11 (15) :7102-7110
[7]   2D photonic memristor beyond graphene: progress and prospects [J].
Feng, Xuewei ;
Liu, Xinke ;
Ang, Kah-Wee .
NANOPHOTONICS, 2020, 9 (07) :1579-1599
[8]  
Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]
[9]   Low-Dimensional Lead-Free Inorganic Perovskites for Resistive Switching with Ultralow Bias [J].
Ge, Shuaipeng ;
Guan, Xinwei ;
Wang, Yutao ;
Lin, Chun-Ho ;
Cui, Yimin ;
Huang, Yunxia ;
Zhang, Xinran ;
Zhang, Ruoxuan ;
Yang, Xiaoting ;
Wu, Tom .
ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (25)
[10]   On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology [J].
Guan, Ximeng ;
Yu, Shimeng ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) :1172-1182