Improved Efficiency in Outphasing Power Amplifier by Mixing Outphasing and Amplitude Modulation

被引:0
作者
Tajima, Yusuke [1 ]
Wandrei, David [1 ]
Schultz, Qin-Shen [1 ]
Quach, Tony [2 ]
Watson, Paul [2 ]
Gouty, William [2 ]
机构
[1] InnoWave Inc, Merrimack, NH 03054 USA
[2] AFRL RYDI, Wright Patterson AFB, OH 45433 USA
来源
2017 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR) | 2017年
关键词
Outphasing amplifier; Efficiency; Linearity; amplitude modulation; LTE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Outphasing amplifier using input signals that are both amplitude and differential phase modulated (mixed mode) has demonstrated higher efficient amplification than pure outphasing or amplitude modulation alone. An algorithm to convert the input signal to the mixed mode modulation was introduced. With LTE signal having 7.5 dB of Peak-to-Average ratio, the mixed mode modulation improved the efficiency of the amplifier as much as 15%. At the best condition, we achieved 77 % of output stage drain efficiency with the ACPR of 27dBc at 40 dBm of average output power before DPD correction. The mixed mode modulation also made it possible to configure a multistage outphasing amplifier with a total gain of 20 dB and 67% of overall efficiency. The paper explains the principle of operation, test bench configuration and actual data obtained.
引用
收藏
页码:55 / 58
页数:4
相关论文
共 50 条
  • [21] Design of an Outphasing Power Amplifier Using Complex Combining Method for Broadband Application
    Hu, Chunyu
    Shi, Weimin
    Yang, Rongxing
    Lin, Shuaijiang
    Dai, Zhijiang
    Gao, Ruibin
    Huang, Chaoyi
    Pang, Jingzhou
    Li, Mingyu
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (04): : 443 - 446
  • [22] An Outphasing Power Amplifier Based on Voltage-Current Combiner and Dynamic Power Control
    Yan, Jiashu
    Du, Zhi-Xia
    Lin, Xin
    Xiao, Yicheng
    Chen, Siyu
    Guo, Chunbing
    2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
  • [23] Analysis and Design of Broadband Outphasing Power Amplifier Based on Complex Combining Impedance
    Hu, Chunyu
    Yang, Rongxing
    Shi, Weimin
    Li, Li
    Gao, Ruibin
    Dai, Zhijiang
    Pang, Jingzhou
    Li, Mingyu
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2023, 70 (04) : 1542 - 1554
  • [24] A Differential Oscillator Injection Locking Technique for an 8 GHz Outphasing Modulator With 22.7% Modulation Efficiency
    Mehrjoo, Mohammad S.
    Buckwalter, James F.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (12) : 3093 - 3102
  • [25] A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
    Qureshi, Jawad H.
    Pelk, Marco J.
    Marchetti, Mauro
    Neo, W. C. Edmund
    Gajadharsing, John R.
    van der Heijden, Mark P.
    de Vreede, L. C. N.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (08) : 1925 - 1935
  • [26] A Dual-Band Outphasing Power Amplifier Based on Noncommensurate Transmission Line Concept
    Wang, Weiwei
    Chen, Shichang
    Cai, Jialin
    Zhou, Xin Yu
    Chan, Wing Shing
    Wang, Gaofeng
    Xue, Quan
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (07) : 3079 - 3089
  • [27] Design of a Dual-Band Outphasing Power Amplifier Based on Multiple Topology Fitting
    Huang, Jiayu
    Wang, Weiwei
    Xu, Kuiwen
    Cai, Jialin
    Pang, Jingzhou
    Crupi, Giovanni
    Wang, Gaofeng
    Chen, Shichang
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2024, 71 (06) : 3011 - 3015
  • [28] A 112W GaN Dual Input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.
    Acar, Mustafa
    Qureshi, Jawad
    Wesson, Robin
    de Vreede, Leo C. N.
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [29] The Outphasing RF Power Amplifier: A Comprehensive Analysis and a Class-B CMOS Realization
    Moloudi, Shervin
    Abidi, Asad A.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (06) : 1357 - 1369
  • [30] A High Efficiency Multi-Mode Outphasing RF Power Amplifier With 31.6 dBm Peak Output Power in 45nm CMOS
    Banerjee, Aritra
    Ding, Lei
    Hezar, Rahmi
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 67 (03) : 815 - 828