Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging

被引：10

作者：

Onaka-Masada, Ayumi ^{[1
,2
]}

Okuyama, Ryosuke ^{[2
]}

Nakai, Toshiro ^{[2
]}

Shigematsu, Satoshi ^{[2
]}

Okuda, Hidehiko ^{[2
]}

Kobayashi, Koji ^{[2
]}

Hirose, Ryo ^{[2
]}

Kadono, Takeshi ^{[2
]}

Koga, Yoshihiro ^{[2
]}

Shinohara, Masanori ^{[3
]}

Sueoka, Koji ^{[4
]}

Kurita, Kazunari ^{[2
]}

机构：

[1] Okayama Prefectural Univ, Grad Sch Syst Engn, Okayama 7191197, Japan

[2] SUMCO Corp, Technol Div, Adv Evaluat & Technol Dev Dept, Imari, Saga 8494256, Japan

[3] Natl Inst Technol, Sasebo Coll, Dept Elect & Elect Engn, Nagasaki 8571171, Japan

[4] Okayama Prefectural Univ, Dept Commun Engn, Okayama 7191197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 09期

基金：

日本学术振兴会;

关键词：

OXYGEN PRECIPITATION; CARBON; DEFECTS; SI; CZOCHRALSKI; SOLUBILITY; DIFFUSION; FE; SEGREGATION; IMPURITIES;

D O I：

10.7567/JJAP.57.091302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction of iron (Fe) with defects induced by a high hydrocarbon-molecular-ion-implantation dose of 1 x 10(16) cm(-2) in a Czochralski-grown silicon substrate and an epitaxial growth layer was investigated using secondary ion mass spectroscopy, transmission electron microscopy, and laser-assisted atom probe tomography (L-APT). High-dose hydrocarbon-molecular-ion-implantation formed two types of defects in the projection range: stacking faults and carbon agglomerates. It was demonstrated that the dominant gettering mechanisms of the two types of defects differ. Carbon agglomerates formed by implantation of the epitaxial growth layer exhibited high gettering efficiency for Fe. The L-APT data indicated that the Fe gettering efficiency is strongly affected by the distribution of oxygen atoms in carbon agglomerates. It is suggested that Fe gettering on agglomerates is due to the strong electronic interaction between carbon agglomerates and Fe but suppressed by oxygen atoms in agglomerates. (C) 2018 The Japan Society of Applied Physics

引用

页数：7

共 28 条

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Kurita, Kazunari
Kadono, Takeshi
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Hirose, Ryo
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Onaka-Masada, Ayumi
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Koga, Yoshihiro
SENSORS, 2019, 19 (09)
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Onaka-Masada, Ayumi
Okuyama, Ryosuke
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Kadono, Takeshi
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Sueoka, Koji
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2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 166 - 168
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Kadono, Takeshi
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