Percolation transport in an AlGaN/GaN heterostructure

被引：2

作者：

Sawaki, N. ^{[1
,3
]}

Han, X. X. ^{[2
]}

Honda, Y. ^{[2
]}

Yamaguchi, M. ^{[2
]}

机构：

[1] Aichi Instit Technol, Dept Elect Engg, Toyota 4700392, Japan

[2] Nagoya Univ, Dept Elect Engn, Nagoya, Aichi 464, Japan

[3] Ind Sci Res Inst Nagoya, Nagoya, Aichi 464, Japan

来源：

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) | 2009年 / 193卷

关键词：

D O I：

10.1088/1742-6596/193/1/012012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magneto-transport in an AlGaN/GaN heterostructure has been studied at 4.2K and it was found that the magneto-resistance is negative at low fields. The negative components disappeared by inserting a thin AlN film between the AlGaN barrier layer and the GaN layer. The negative component is attributed to the presence of alloy disorder at the hetero-interface. It increases linearly followed by saturation, which is characteristic to the percolation transport in random potential.

引用

页数：4

共 12 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[2] Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure -: art. no. 245323
Cho, HI
Gusev, GM
Kvon, ZD
Renard, VT
Lee, JH
Portal, JC
[J]. PHYSICAL REVIEW B, 2005, 71 (24)
[3] Magnetoconductance of molecularly linked Au nanoparticle arrays near the metal-insulator transition
Dunford, J. L.
Dhirani, A. -A.
Statt, B. W.
[J]. PHYSICAL REVIEW B, 2006, 74 (11):
[4] SIDE GATING IN DELTA-DOPED QUANTUM WIRES
FENG, Y
THORNTON, TJ
HARRIS, JJ
WILLIAMS, D
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (01) : 94 - 96
[5] Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Han, Xiuxun
Honda, Yoshio
Narita, Tetsuo
Yamaguchi, Masahito
Sawaki, Nobuhiko
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (04)
[6] Current localization and enhanced percolative low-field magnetoresistance in disordered half metals
Ju, S
Cai, TY
Li, ZY
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (17) : 1 - 3
[7] The temperature dependence and scaling of the negative magneto-resistance in Si atomic-layer-doped GaAs
Katsuno, M
Sawaki, N
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (06) : 549 - 556
[8] NEGATIVE MAGNETORESISTANCE AND INELASTIC-SCATTERING TIME IN TWO-DIMENSIONAL ELECTRON-SYSTEMS IN GAAS/ALXGA1-XAS HETEROJUNCTION INTERFACES
NAMBU, T
KAWAJI, S
KUBOKI, K
KAWAGUCHI, Y
YOSHINO, J
SAKAKI, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1984, 53 (02) : 682 - 686
[9] Quasiclassical magnetotransport in a random array of antidots -: art. no. 205306
Polyakov, DG
Evers, F
Mirlin, AD
Wölfle, P
[J]. PHYSICAL REVIEW B, 2001, 64 (20):
[10] Seeger K., 1999, SEMICONDUCTOR PHYS

← 1 2 →