Percolation transport in an AlGaN/GaN heterostructure

被引：2

作者：

Sawaki, N. ^{[1
,3
]}

Han, X. X. ^{[2
]}

Honda, Y. ^{[2
]}

Yamaguchi, M. ^{[2
]}

机构：

[1] Aichi Instit Technol, Dept Elect Engg, Toyota 4700392, Japan

[2] Nagoya Univ, Dept Elect Engn, Nagoya, Aichi 464, Japan

[3] Ind Sci Res Inst Nagoya, Nagoya, Aichi 464, Japan

来源：

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) | 2009年 / 193卷

关键词：

D O I：

10.1088/1742-6596/193/1/012012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magneto-transport in an AlGaN/GaN heterostructure has been studied at 4.2K and it was found that the magneto-resistance is negative at low fields. The negative components disappeared by inserting a thin AlN film between the AlGaN barrier layer and the GaN layer. The negative component is attributed to the presence of alloy disorder at the hetero-interface. It increases linearly followed by saturation, which is characteristic to the percolation transport in random potential.

引用

页数：4

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