Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress

被引：1

作者：

Chen, Chun-Heng ^{[1
,2
]}

Liao, Ming Han ^{[3
]}

Chiu, Fu-Chien ^{[4
]}

Hwang, Huey-Liang ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[3] Taiwan Semicond Mfg Co, R&D, Hsinchu 30013, Taiwan

[4] Ming Chuan Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 03期

关键词：

electric breakdown; electrostatic discharge; high-k dielectric thin films; VOLTAGE CHARACTERISTICS; INSULATOR;

D O I：

10.1063/1.3290973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission line pulse measurements were used to investigate the reliability of the HfO(2) dielectric under an electrostatic discharge event. Time-dependent dielectric breakdown of the gate oxide was characterized down to the microsecond time regime. The positive oxide-trapped charges Q(ot)+ were observed beyond a certain electric field and the corresponding centroid evolution was examined. In the high-field stress regime, the field acceleration parameter of the HfO(2) dielectric is smaller than that of the silicon oxynitride. We also demonstrated this phenomenon can be attributed to the stronger phonon-assisted tunneling process in the high-k dielectrics.

引用

页数：3

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