Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

被引：21

作者：

Xu, Xin ^{[1
]}

Zhang, Letao ^{[1
]}

Shao, Yang ^{[1
]}

Chen, Zheyuan ^{[1
]}

Le, Yong ^{[1
]}

Zhang, Shengdong ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 03期

基金：

中国国家自然科学基金;

关键词：

All by indium tin oxide (ITO); amorphous ITO (a-ITO); cosputtering; thin-film transistors (TFTs); TRANSPARENT;

D O I：

10.1109/TED.2015.2513421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous indium tin oxide (a-ITO) thin-film transistors (TFTs) were fabricated with the channel layer deposited by the cosputtering of In2O3 and SnO2 ceramic targets. It is shown that the cosputter-deposited ITO film for the channel layer well keeps in the amorphous structure even after being annealed at 300 degrees if the sputtering powers of the two targets are properly selected. The fabricated a-ITO TFTs in the cosputtering technique show a high device performance, including a field-effect mobility of 25.9 cm(2)V(-1)s(-1), a subthreshold swing of 0.33 V/decade, an ON/OFF-current ratio of >1 x 10(9), and a desirable threshold voltage variation range. In addition, an acceptable characteristic stability under electrical stress is also observed in the passivated and annealed a-ITO TFTs.

引用

页码：1072 / 1077

页数：6

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