In Situ Formed Edge-Rich Ni3S2-NiOOH Heterojunctions for Oxygen Evolution Reaction

被引:20
作者
Yan, Qing [1 ]
Liu, Zheng [2 ]
Bai, Xiaojing [3 ]
Zhang, Xuan [2 ]
Gao, Ruiqin [1 ]
Yuan, Weiyong [4 ]
Chen, Zhengfei [1 ]
Li, Zhoupeng [4 ]
Li, Yiju [5 ]
机构
[1] NingboTech Univ, Sch Biol & Chem Engn, Ningbo 315100, Peoples R China
[2] Harbin Engn Univ, Coll Mat Sci & Chem Engn, Key Lab Superlight Mat & Surface Technol, Minist Educ, Harbin 150001, Peoples R China
[3] Anyang Inst Technol, Coll Mat Sci & Engn, Anyang 455000, Henan, Peoples R China
[4] Zhejiang Univ, Coll Chem & Biol Engn, Hangzhou 310027, Peoples R China
[5] Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
Edge-Rich; Freestanding; Oxygen Evolution Reaction; STABLE BIFUNCTIONAL ELECTROCATALYSTS; HYDROGEN EVOLUTION; EFFICIENT; ALKALINE; OXIDATION; ELECTRODE; FILMS; MOS2; H-2;
D O I
10.1149/1945-7111/ac7083
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Developing highly active, earth-abundant, and durable electrocatalysts is desired but challenging for oxygen evolution reaction (OER). In this work, we design an electrocatalyst of the edge-rich nickel sulfide arrays on the nickel foam (Ni3S2 NSs-NF) by a facile yet efficient wet-chemical method. Benefiting from the three-dimensional nanostructure with numerous active edges, the prepared Ni3S2 NSs-NF exhibits superior OER performance in alkaline conditions. An in-depth study reveals that the real active sites toward OER are the in situ formed heterogenous Ni3S2-NiOOH. Density functional theory (DFT) calculations indicate the density of state (DOS) of the Ni3S2-NiOOH heterojunction near the Fermi level is enhanced, contributing to higher electronic conductivity. As a result, the Ni3S2 NSs-NF with abundant Ni3S2-NiOOH heterojunctions exhibits an efficient electrochemical activity toward OER in alkaline conditions. The Ni3S2 NSs-NF electrode shows an overpotential of 244 mV at 10 mA cm(-2) with a Tafel slope of 75 mV dec(-1) and possesses ultrastable performance even at 100 mA cm(-2).
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页数:7
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