Refractive indices of cubic-phase MgxZn1-xO thin-film alloys -: art. no. 023515

被引:33
作者
Chen, NB [1 ]
Wu, HZ
Xu, TN
机构
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[3] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
关键词
D O I
10.1063/1.1821633
中图分类号
O59 [应用物理学];
学科分类号
摘要
Refractive indices for cubic-phase MgxZn1-xO (0.55less than or equal toxless than or equal to1) thin-film alloys were determined from transmission measurements and Manifacier envelope method. The refractive index of cubic MgxZn1-xO decreases with the Mg fraction increase, such as at the wavelength of 400 nm the refractive index decreases from 1.89 to 1.73 as x increases from 0.57 to 1.0. The refractive index dispersion relation of cubic MgxZn1-xO in the visible-light region (400-800 nm) follows the first-order Sellmeier equation and decreases with the increase of Mg fraction. (C) 2005 American Institute of Physics.
引用
收藏
页数:4
相关论文
共 50 条
[41]   Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes -: art. no. 123505 [J].
Choi, JM ;
Hwang, DK ;
Kim, JH ;
Im, S .
APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3
[42]   Microbalance chemical sensor based on thin-film bulk acoustic wave resonators -: art. no. 173504 [J].
Benetti, M ;
Cannatà, D ;
Di Pietrantonio, F ;
Foglietti, V ;
Verona, E .
APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3
[43]   Operating principle of polymer insulator organic thin-film transistors exposed to moisture -: art. no. 074504 [J].
Bäcklund, TG ;
Osterbacka, R ;
Stubb, H ;
Bobacka, J ;
Ivaska, A .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
[44]   Phase stability tuning in the NbxZr1-xN thin-film system for large stacking fault density and enhanced mechanical strength -: art. no. 131922 [J].
Joelsson, T ;
Hultman, L ;
Hugosson, HW ;
Molina-Aldareguia, JM .
APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3
[45]   HIGH Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD) [J].
Alema, Fikadu ;
Ledyaev, Oleg ;
Miller, Ross ;
Beletsky, Valeria ;
Hertog, Brian ;
Osinsky, Andrei ;
Schoenfeld, Winston V. .
OXIDE-BASED MATERIALS AND DEVICES VII, 2016, 9749
[46]   Responsivity modulation of thin-film CdS by means of lock-in technique - art. no. 68900Q [J].
Acharya, K. P. ;
Ullrich, B. .
OPTICAL COMPONENTS AND MATERIALS V, 2008, 6890 :Q8900-Q8900
[47]   High mobility n-channel organic thin-film transistors and complementary inverters -: art. no. 064502 [J].
Gundlach, DJ ;
Pernstich, KP ;
Wilckens, G ;
Grüter, M ;
Haas, S ;
Batlogg, B .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)
[48]   Electrophosphorescence and delayed electroluminescence from pristine polyfluorene thin-film devices at low temperature -: art. no. 127402 [J].
Sinha, S ;
Rothe, C ;
Güntner, R ;
Scherf, U ;
Monkman, AP .
PHYSICAL REVIEW LETTERS, 2003, 90 (12) :4
[49]   Flexible semitransparent pentacene thin-film transistors with polymer dielectric layers and NiOx electrodes -: art. no. 023504 [J].
Lee, J ;
Hwang, DK ;
Choi, JM ;
Lee, K ;
Kim, JH ;
Im, S ;
Park, JH ;
Kim, E .
APPLIED PHYSICS LETTERS, 2005, 87 (02)
[50]   Thin-film design and fabrication of Double Waveband Infrared Optical Window - art. no. 61503G [J].
Zhao, XM .
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, Pts 1 and 2, 2006, 6150 :G1503-G1503