Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (100) substrates

被引：9
|
作者：
Poser, F
Bhattacharya, A
Weeke, S
Richter, W
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Tata Inst Fundamental Res, Solid State Elect Grp, Bombay 400005, Maharashtra, India
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷
关键词：
nanostructures; metalorganic vapor phase epitaxy; arsenates; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)01886-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Spatially ordered growth of InAs quantum dots (QD) was demonstrated via metalorganic vapour phase epitaxy on step-bunched vicinal GaAs substrates. Regular terraces of step-bunched surfaces were achieved by growing on GaAs (100) substrates off-oriented 2degrees, 4degrees and 6degrees towards the <110> and <111> directions, thus serving as in situ templates for the growth of the QD layer. Multilayer stacks of strain-aligned QDs were successfully grown to improve the size homogeneity and therefore optoelectronic properties. Furthermore, the possibility of fabricating laterally ordered quantum wires (QWR) in the same manner was shown. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：317 / 321
页数：5
相关论文
共 50 条
  • [1] Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy
    Weir, Nicholas
    Yao, Ruizhe
    Lee, Chi-Sen
    Guo, Wei
    JOURNAL OF CRYSTAL GROWTH, 2016, 451 : 79 - 82
  • [2] Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
    Liang, S
    Zhu, HL
    Pan, JQ
    Ye, XL
    Wang, W
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) : 477 - 484
  • [3] Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces
    Soulière, V
    Dumont, H
    Auvray, L
    Monteil, Y
    JOURNAL OF CRYSTAL GROWTH, 2001, 226 (01) : 31 - 38
  • [4] The impact of growth parameters on the formation of InAs quantum dots on GaAS(100) by MOCVD
    Cederberg, JG
    Kaatz, FH
    Biefeld, RM
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (2-3) : 197 - 203
  • [5] Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates
    Scullion, Andrew
    Thompson, David A.
    Botton, Gianluigi A.
    JOURNAL OF CRYSTAL GROWTH, 2015, 412 : 87 - 94
  • [6] Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy
    Saucedo-Zeni, N
    Zamora-Peredo, L
    Gorbatchev, AY
    Lastras-Martínez, A
    Balderas-Navarro, R
    Medel-Ruiz, CI
    Méndez-García, VH
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 201 - 207
  • [7] Highly ordered arrays of In(Ga)As quantum dots on patterned GaAs(001) substrates
    Heidemeyer, H
    Müller, C
    Schmidt, OG
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) : 444 - 449
  • [8] Study of the molecular beam epitaxial growth of InAs on Si-covered GaAs(100) substrates
    Mendez-Garcia, V. H.
    Saucedo-Zeni, N.
    Balderas, R.
    Lopez-Lopez, M.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) : 1451 - 1455
  • [9] Ordered InAs quantum dots on pre-patterned GaAs(001) by local oxidation nanolithography
    Martín-Sánchez, J
    González, Y
    González, L
    Tello, M
    García, R
    Granados, D
    García, JM
    Briones, F
    JOURNAL OF CRYSTAL GROWTH, 2005, 284 (3-4) : 313 - 318
  • [10] Growth and characterization of InAs quantum dots on Si(001) substrates
    Zhao, ZM
    Hul'ko, O
    Kim, HJ
    Liu, J
    Sugahari, T
    Shi, B
    Xie, YH
    JOURNAL OF CRYSTAL GROWTH, 2004, 271 (3-4) : 450 - 455
12345