Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

被引：33

作者：

Fu, Yajun ^{[1
]}

Long, Mingsheng ^{[1
]}

Gao, Anyuan ^{[1
]}

Wang, Yu ^{[1
]}

Pan, Chen ^{[1
]}

Liu, Xiaowei ^{[1
]}

Zeng, Junwen ^{[1
]}

Xu, Kang ^{[1
]}

Zhang, Lili ^{[1
]}

Liu, Erfu ^{[1
]}

Hu, Weida ^{[2
]}

Wang, Xiaomu ^{[3
]}

Miao, Feng ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Nanjing Univ, Sch Elect Sci & Technol, Nanjing 210093, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 04期

基金：

中国国家自然科学基金;

关键词：

MOS2; TRANSISTORS; GRAPHENE; GROWTH; SPIN; TRANSPORT; STATES; DIODE;

D O I：

10.1063/1.4995400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which originates from chalcogen vacancies, obtaining intrinsic high-quality p-type semiconducting TMDs has been challenging. Here, we report an experimental approach to obtain intrinsic p-type Tungsten (W)-based TMDs by substitutional Ta-doping. The obtained few-layer Ta-doped WSe2 (Ta0.01W0.99Se2) field-effect transistor devices exhibit competitive p-type performances, including similar to 10(6) current on/off at room temperature. We also demonstrate high quality van der Waals (vdW) p-n heterojunctions based on Ta0.01W0.99Se2/MoS2 structure, which exhibit nearly ideal diode characteristics (with an ideality factor approaching 1 and a rectification ratio up to 1 x 10(5)) and excellent photodetecting performance. Our study suggests that substitutional Ta-doping holds great promise to realize intrinsic p-type W-based TMDs for future electronic and photonic applications. Published by AIP Publishing.

引用

页数：5

共 40 条

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