Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer

被引：1

作者：

Ni, Yiqiang ^{[1
]}

He, Liang ^{[1
]}

Zhou, Deqiu ^{[1
]}

He, Zhiyuan ^{[1
]}

Chen, Zijun ^{[1
]}

Zheng, Yue ^{[1
]}

Yang, Fan ^{[1
]}

Shen, Zhen ^{[1
]}

Zhang, Xiaorong ^{[1
]}

He, Lei ^{[1
]}

Wu, Zhisheng ^{[1
,3
]}

Zhang, Baijun ^{[1
,3
]}

Liu, Yang ^{[1
,2
,3
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Xin Gang Xi Rd 135, Guangzhou 510275, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Inst Power Elect & Control Technol, Xin Gang Xi Rd 135, Guangzhou 510275, Guangdong, Peoples R China

[3] Sun Yat Sen Univ, State Key Lab Optoelectron Mat & Technol, Xin Gang Xi Rd 135, Guangzhou 510275, Guangdong, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 05期

基金：

中国国家自然科学基金;

关键词：

SILICON; SI(111); THICK; ALN; ENHANCEMENT; TRANSISTORS; INTERLAYER; GROWTH; CARBON;

D O I：

10.1007/s10854-016-4408-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased.

引用

收藏

页码：5158 / 5163

页数：6

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