Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

被引：274

作者：

Zhang, Z. ^{[1
]}

Farzana, E. ^{[1
]}

Arehart, A. R. ^{[1
]}

Ringel, S. A. ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 05期

关键词：

SCHOTTKY; DIODES;

D O I：

10.1063/1.4941429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level optical spectroscopy (DLOS) and deep level transient spectroscopy (DLTS) measurements performed on Ni/beta-Ga2O3 Schottky diodes fabricated on unintentionally doped (010) substrates prepared by edge-defined film-fed growth revealed a rich spectrum of defect states throughout the 4.84 eV bandgap of beta-Ga2O3. Five distinct defect states were detected at E-C - 0.62 eV, 0.82 eV, 1.00 eV, 2.16 eV, and 4.40 eV. The EC - 0.82 eV and 4.40 eV levels are dominant, with concentrations on the order of 10(16) cm(-3). The three DLTS-detected traps at E-C - 0.62 eV, 0.82 eV, and 1.00 eV are similar to traps reported in Czochralski-grown beta-Ga2O3, [K. Irmscher et al., J. Appl. Phys. 110, 063720 (2011)], suggesting possibly common sources. The DLOS-detected states at E-C - 2.16 eV and 4.40 eV exhibit significant lattice relaxation effects in their optical transitions associated with strongly bound defects. As a consequence of this study, the Ni/b-Ga2O3 (010) Schottky barrier height was determined to be 1.55 eV, with good consistency achieved between different characterization techniques. (C) 2016 AIP Publishing LLC.

引用

页数：5

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