Extension of the Hammerstein model for power amplifier applications

被引：12

作者：

Isaksson, M ^{[1
]}

Wisell, D ^{[1
]}

机构：

[1] Univ Gavle, SE-80176 Gavle, Sweden

来源：

ARFTG: AUTOMATIC RF TECHNIQUES GROUP, CONFERENCE DIGEST, SPRING 2004: ON WAFER CHARACTERIZATION | 2004年

关键词：

D O I：

10.1109/ARFTG.2004.1387868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel behavioral model for RF amplifiers with memory. The model is an extension to the well-known Hammerstein model. All identification and verification are done using sampled input and output signals of a power amplifier. The extended Hammerstein model is found to decrease the out-of-band modeling error with as much as 10 dB compared to the Hammerstein model.

引用

页码：131 / 137

页数：7

共 10 条

[1]

ANDERSEN O, 2000, ARFTG 2000 BOULD CO, P56

[2]

[Anonymous], 1998, FUNDEMENTALS STAT SI

[3] MEASUREMENT AND SIMULATION OF MEMORY EFFECTS IN PREDISTORTION LINEARIZERS [J].