High power continuous and quasicontinuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers

被引：20

作者：

Garbuzov, DZ ^{[1
]}

Menna, RJ ^{[1
]}

Martinelli, RU ^{[1
]}

Abeles, JH ^{[1
]}

Connolly, JC ^{[1
]}

机构：

[1] Sarnoff Corp, Princeton, NJ 08543 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 19期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19971099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of the broad-waveguide concept to InGaAsP/InP diode lasers has resulted in a fourfold reduction in internal loss to 1.3cm(-1) while achieving a record low threshold current of 73A/cm(2) per quantum well. Output powers of 5.2W continuous wave and 10W quasi-continuous wave are demonstrated for 200 mu m-aperture lasers emitting at 1.43 mu m.

引用

页码：1635 / 1636

页数：2

共 5 条

[1] 1.5 mu m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power [J].