Wide-angle, polarization-independent ultrathin broadband visible absorbers

被引:88
作者
Lee, Kyu-Tae [1 ]
Ji, Chengang [1 ]
Guo, L. Jay [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
INFRARED PERFECT ABSORBER; ABSORPTION; PHOTOVOLTAICS; FILM;
D O I
10.1063/1.4939969
中图分类号
O59 [应用物理学];
学科分类号
摘要
A capability of absorbing a broad range of visible lights is essential to boost the performance of various applications, such as photovoltaics (PV), photodetectors, and thermal emitters. Here, we present an angle-insensitive, polarization-independent ultrathin (< 150 nm) broadband absorber in the visible regime exploiting strong interference behaviors in highly absorbing semiconductor materials. A proposed structure simply has four layers composed of two stacks of a metal and a semiconductor demonstrating a remarkably enhanced absorption property as compared with the device without a top semiconductor film. This is attributed to multi-cavity resonance effects in each cavity, which is obviously elucidated with phase calculations and electric field distributions. The maximum absorption efficiency of the device is 95.5% at a resonance and its absorption characteristic can be maintained over a wide angle of incidence up to +/- 70 degrees regardless of the incident light polarization. Finally, we investigate how our approach can be utilized to achieve a tandem PV cell with high efficiency. Our strategy can be applied to other material systems and can be useful in diverse applications, including thermal emitters and PV. (C) 2016 AIP Publishing LLC.
引用
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页数:5
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