Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

Direct imaging of atomic step morphologies and individual threading dislocations in on-axis epitaxial 4H-SiC surfaces is presented. Topographically sensitive electron images of the crystalline surfaces were obtained through forescattered electron detection inside a conventional scanning electron microscope. This technique, termed electron channeling contrast imaging (ECCI), has been utilized to reveal the configuration of highly stepped, homoepitaxial 4H-SiC films grown on 4H-SiC mesa structures. Individual threading dislocations have been consistently imaged at the core of spiral atomic step morphologies located on the 4H-SiC surfaces. The ability of ECCI to image atomic steps was verified by atomic force microscopy. (c) 2007 American Institute of Physics.