Effects of Annealing Temperature on the Properties of ZnO Thin Films and Ultraviolet Photodetectors

被引：0

作者：

Wang, Wenxia ^{[1
]}

Liu, Yantao ^{[1
]}

Ma, Jianping ^{[1
]}

Wang, Ying ^{[1
]}

Peng, Xin ^{[1
]}

He, Jiqiang ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Elect Engn, Xian, Shaanxi, Peoples R China

来源：

2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年

关键词：

ZnO thin film; MSM; Ultraviolet detector; Annealing temperatures; PERFORMANCE;

D O I：

10.1109/edssc.2019.8754062

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

ZnO thin films were deposited by RF magnetron sputtering on glass substrates, and the Au-ZnO-Au ultraviolet photodetectors were fabricated. The effects of annealing temperature on the properties of ZnO thin films and ultraviolet photodetectors were investigated, systematically. The results show that ZnO film has a c-axis preferred orientation, the resistivity and the carrier concentration of thin film can be effecttively improved from changing annealing temperature. The average transmittance of ZnO is above 85 % in the visible range and the strong absorption of ultraviolet light can be observed. After annealing at 500 degrees C, the dark current and photocurrent of photodetectors can reach 1.5 mu A and 3.6 mA at 10 V bias respectively.

引用

页数：3

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