Pentacene-based planar- and vertical-type organic thin-film transistor

被引：16

作者：

Yang, Chuan-Yi ^{[1
]}

Cheng, Shiau-Shin

Ou, Tzu-Min

Wu, Meng-Chyi

Wu, Chun-Hung

Chao, Che-Hsi

Lin, Shih-Yen

Chan, Yi-Jen

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Chung Cheng Univ, Dept Elect Engn, Chiayi 621, Taiwan

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[4] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 07期

关键词：

organic thin-film transistor (OTFT); organic triode; pentacene; vertical organic transistor;

D O I：

10.1109/TED.2007.898672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pentacene-based planar- and vertical-type organic thin-film transistors (OTFTs) are investigated in this paper. High operation voltages are observed for the planar-type OTFTs with top source/drain electrodes, which results from the limitations of channel length and low material mobility. With a reduced channel length, a LiF hole-injection enhancement layer, and a thin metal gate, the vertical-type pentacene OTFTs exhibit a low-voltage operation of less than 5 V and a compatible ON/OFF ratio of larger than 10(2). The smaller current gain observed from the device under current modulation is attributed to the increase of base recombination current under the common-emitter mode.

引用

页码：1633 / 1636

页数：4

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