Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV

被引：15

作者：

Choi, S. G. ^{[1
]}

Aspnes, D. E. ^{[2
]}

Fuchser, A. L. ^{[3
]}

Martinez-Tomas, C. ^{[4
]}

Munoz Sanjose, V. ^{[4
]}

Levi, D. H. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[3] JA Woollam Co Inc, Lincoln, NE 68508 USA

[4] Univ Valencia, Dept Fis Aplicada & Electromagnetismo, E-46100 Burjassot, Spain

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

critical points; dielectric function; ellipsometry; III-VI semiconductors; indium compounds; Kramers-Kronig relations; optical films; ultraviolet spectra; INDIUM SELENIDE; RECIPROCAL-SPACE; THIN-FILMS; SPECTRA; GASE; REFLECTIVITY;

D O I：

10.1063/1.3420080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the component E perpendicular to c of the pseudodielectric-function tensor <<epsilon(E)>>=<<epsilon(1)(E)>>+i <<epsilon(2)(E)>> of gamma-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis. (C) 2010 American Institute of Physics. [doi:10.1063/1.3420080]

引用

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