Ab-initio study of donor-acceptor codoping for n-type CuO

被引:5
作者
Peng, Yuan [1 ]
Zheng, Jianwei [2 ]
Wu, Ping [3 ]
Wang, Junling [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Inst High Performance Comp, Singapore 138632, Singapore
[3] Singapore Univ Technol & Design, Singapore 138682, Singapore
基金
新加坡国家研究基金会;
关键词
P-TYPE GAN; OXIDE; FABRICATION; DESIGN;
D O I
10.1063/1.4900495
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single n-type dopant in CuO has either a deep donor level or limited solubility, inefficient in generating free electrons. We have performed ab-initio study of the donor-acceptor codoping to obtain n-type CuO. Our results show that N codoping can slightly improve the donor level of Zr and In by forming shallower n-type complexes (Zr-Cu-N-O and 2In(Cu)-N-O), but their formation energies are too high to be realized in experiments. However, Li codoping with Al and Ga is found to be relatively easy to achieve. 2Al(Cu)-Li-Cu and 2Ga(Cu)-Li-Cu have shallower donor levels than single Al and Ga by 0.14 eV and 0.08 eV, respectively, and their formation energies are reasonably low to act as efficient codopants. Moreover, Li codoping with both Al and Ga produce an empty impurity band just below the host conduction band minimum, which may reduce the donor ionization energy at high codoping concentrations. (C) 2014 AIP Publishing LLC.
引用
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页数:5
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