Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer

被引：8

作者：

Mikhailovich, S. V. ^{[1
]}

Pavlov, A. Yu. ^{[1
]}

Tomosh, K. N. ^{[1
]}

Fedorov, Yu. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2018年 / 44卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

TRANSISTORS;

D O I：

10.1134/S1063785018050218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl3 plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode.

引用

页码：435 / 437

页数：3

共 14 条

[1] Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures [J].

Andrianov, N. A. ;

Kobelev, A. A. ;

Smirnov, A. S. ;

Barsukov, Yu V. ;

Zhukov, Yu M. .

TECHNICAL PHYSICS, 2017, 62 (03) :436-440

[2] Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth [J].

Brown, D. F. ;

Shinohara, K. ;

Williams, A. ;

Milosavljevic, I. ;

Grabar, R. ;

Hashimoto, P. ;

Willadsen, P. J. ;

Schmitz, A. ;

Corrion, A. L. ;

Kim, S. ;

Regan, D. ;

Butler, C. M. ;

Burnham, S. D. ;

Micovic, M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) :1063-1067

[3] Gate-recessed normally-off GaN-on-Si HEMT using a new O2-BCl3 digital etching technique [J].

Burnham, Shawn D. ;

Boutros, Karim ;

Hashimoto, Paul ;

Butler, Colleen ;

Wong, Danny W. S. ;

Hu, Ming ;

Micovic, Miroslav .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)

[4] Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al0.45Ga0.55N barrier layer [J].

Chakroun, Ahmed ;

Jaouad, Abdelatif ;

Bouchilaoun, Meriem ;

Arenas, Osvaldo ;

Soltani, Ali ;

Maher, Hassan .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (08)

[5] High-voltage MIS-gated GaN transistors [J].

Erofeev, E. V. ;

Fedin, I. V. ;

Fedina, V. V. ;

Stepanenko, M. V. ;

Yuryeva, A. V. .

SEMICONDUCTORS, 2017, 51 (09) :1229-1232

[6] Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands [J].

Fedorov Y.V. ;

Gnatyuk D.L. ;

Bugaev A.S. ;

Matveenko O.S. ;

Galiev R.R. ;

Zuev A.V. ;

Pavlov A.Y. ;

Mikhailovich S.V. .

Russian Microelectronics, 2016, 45 (02) :128-136

[7]

[Галиев Р.Р. Galiev R.R.], 2015, [Нано- и микросистемная техника, Nano- i mikrosistemnaya tekhnika], P21

[8] GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm [J].

Hahn, Herwig ;

Benkhelifa, Fouad ;

Ambacher, Oliver ;

Alam, Assadullah ;

Heuken, Michael ;

Yacoub, Hady ;

Noculak, Achim ;

Kalisch, Holger ;

Vescan, Andrei .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (09)

[9] Enhancement-mode AlGaN/GaN HEMTs on silicon substrate [J].

Jia, Shuo ;

Cai, Yong ;

Wang, Deliang ;

Zhang, Baoshun ;

Lau, Kei May ;

Chen, Kevin J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (06) :1474-1477

[10] Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications [J].

Shinohara, Keisuke ;

Regan, Dean C. ;

Tang, Yan ;

Corrion, Andrea L. ;

Brown, David F. ;

Wong, Joel C. ;

Robinson, John F. ;

Fung, Helen H. ;

Schmitz, Adele ;

Oh, Thomas C. ;

Kim, Samuel Jungjin ;

Chen, Peter S. ;

Nagele, Robert G. ;

Margomenos, Alexandros D. ;

Micovic, Miroslav .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :2982-2996

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